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2SB1424 / 2SA1585S
Transistors
Low VCE(sat) Transistor (-20V, -3A)
2SB1424 / 2SA1585S
Features 1) Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. External dimensions (Unit : mm)
2SB1424
0.50.1
4.5+0.2 -0.1 1.60.1 1.50.1
2SA1585S
40.2 20.2
30.2
4.00.3 2.5+0.2 -0.1
(15Min.)
(1)
(2)
(3) 0.40.1 1.50.1
1.00.2
0.4+0.1 -0.05
0.45+0.15 -0.05
Structure Epitaxial planar type PNP silicon transistor
0.40.1 1.50.1
0.50.1 3.00.2
3Min.
5
2.5 +0.4 -0.1
0.5
+0.15 0.45 -0.05
ROHM : MPT3 EIAJ : SC-62
(1) Base (2) Collector (3) Emitter
(1) (2) (3)
Abbreviated symbol: AE
Denotes hFE
ROHM : SPT EIAJ : SC-72
(1) Emitter (2) Collector (3) Base
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage Collector-emitter voltage Emitter-base voltage
Symbol VCBO VCEO VEBO IC ICP
Limits -20 -20 -6 -3 -2 -5 0.5 0.4 150 -55 to 150
Unit V V V A A(Pulse) W
2SB1424
Collector current 2SA1585S
Collector power dissipation
2SB1424 2SA1585S
PC Tj Tstg
Junction temperature Storage temperature
C C
Single pulse Pw=10ms
Rev.A
1/3
2SB1424 / 2SA1585S
Transistors
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob
Min. -20 -20 -6 - - - 120 - -
Typ. - - - - - - - 240 35
Max. - - - -0.1 -0.1 -0.5 390 - -
Unit V V V IC= -50A IC= -1mA IE= -50A VCB= -20V VEB= -5V
Conditions
A A
V - MHz pF
IC/IB= -2A/ -0.1A VCE= -2V, IC= -0.1A VCE= -2V, IE=0.5A, f=100MHz VCB= -10V, IE=0A, f=1MHz
Packaging specifications and hFE
Package Code Type 2SA1585S 2SB1424 hFE QR QR - Basic ordering unit (pieces) TP 5000 Taping T100 1000 -
hFE values are classified as follows :
Item hFE Q 120 to 270 R 180 to 390
Electrical characteristic curves
-10 -5
VCE= -2V
-2.0
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
-2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -5m -2m -1m 0
Ta=100C 25C -40C
-1.6
-12mA -10mA
COLLECTOR CURRENT : IC (A)
-20mA -18mA
-16m
A
Ta=25C
-14mA
-5
-50mA
Ta=25C
-4
-1.2
-8mA
-3
-45mA -40mA -35mA -30mA -25mA
-20mA
-15mA
-6mA
-0.8
-4mA -2mA
IB=0A -1.0
-2
-10mA
-5mA
-0.4
-1
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 BASE TO EMITTER VOLTAGE : VBE (V)
0 0
-0.2
-0.4
-0.6
-0.8
0 0
IB=0A
-1
-2
-3
-4
-5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1
Grounded emitter propagation characteristics
Fig.2
Grounded emitter output characteristics ( )
Fig.3
Grounded emitter output characteristics ( )
Rev.A
2/3
2SB1424 / 2SA1585S
Transistors
5k 2k
VCE= -2V Ta=100C 25C -40C
-2 -1 -500m -200m -100m -50m -20m -10m -5m
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
IC/IB=10
-2 -1 -500m -200m -100m -50m -20m -10m -5m
IC/IB=20
DC CURRENT GAIN : hFE
1k 500 200 100 50 20 10 5
-1m -2m
Ta=100C 25C -40C
Ta=100C 25C -40C
-5m -0m -20m -50m -100m -200m -500m -1
-2
-5 -10
-2m -1m -2m -5m -10m-20m -50m-100m -200m -500m -1 -2
-5 -10
-2m -1m -2m -5m -10m -20m -50m -100m -200m -500m -1 -2
-5 -10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.4
DC current gain vs. collector current
IC/IB=50
Fig.5
Collector-emitter saturation voltage vs. collector curren ( )
Ta=25C f=1MHz IE=0A IC=0A
Cib
Fig.6
Collector-emitter saturation voltage vs. collector current ( )
Ta=25C VCE= -2V
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
-2 -1 -500m -200m -100m -50m -20m -10m -5m
EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
1000 500
1000
TRANSITION FREQUENCY : fT (MHz)
500 200 100 50 20 10 5 2 1
Ta=100C -40C 25C
200 100 50
Cob
20 10 -0.1 -0.2 -0.5 -1
-2m -1m -2m -5m -10m -20m -50m -100m -200m -500m-1 -2
-5 -10
-2
-5 -10 -20
-50
1
2
5
10
20
50 100 200 5001000
COLLECTOR CURRENT : IC (A)
EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER CURRENT : IE (mA)
Fig.7
Collector-emitter saturation voltage vs. collector current (
Fig.8
)
Gain bandwidth product vs. emitter current Collector output capacitance vs. collector-base voltage
Fig.9
Emitter input capacitance vs. emitter base voltage
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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